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參數(shù)資料
| 型號(hào)： | AP4407M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 83K |
| 代理商： | AP4407M |
AP4407M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
4
8
12
16
20
24
28
32
36
40
0
1
1
2
2
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
A
=150
o
C
-10V
-5.0V
-4.5V
-4.0V
V
G
=-3.0V
10
15
20
25
3
5
7
9
11
-V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=-10A
T
A
=25
o
C
0.60
0.80
1.00
1.20
1.40
1.60
1.80
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
V
GS
= -10V
I
D
=-10A
0.01
0.10
1.00
10.00
100.00
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V
SD
, Source-to-Drain Voltage (V)
-
S
(
T
j
=25
o
C
T
j
=150
o
C
0
1
2
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-
G
0
6
12
18
24
30
36
42
0
1
2
3
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
A
=25
o
C
-10V
-5.0V
-4.5V
-4.0V
V
G
=-3.0V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4407P | P-CHANNEL ENHANCEMENT MODE |
| AP4407S | P-CHANNEL ENHANCEMENT MODE |
| AP4409GEM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4409GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4410M | N-CHANNEL ENHANCEMENT MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4407P | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4407S | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4409AGEM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4409AGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4409GEM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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