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參數(shù)資料
| 型號： | AOD421 |
| 廠商： | ALPHA |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transisto |
| 中文描述： | 的P -溝道增強(qiáng)型場效應(yīng)Transisto |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 126K |
| 代理商： | AOD421 |
AOD421
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-20
V
-0.5
-2.5
±1
±10
-1.4
T
J
=55°C
μ
A
μ
A
V
GS(th)
I
D(ON)
-0.7
-15
-0.9
V
A
61
83
75
110
8.8
-0.81
75
105
95
145
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-1
-8.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
512
77
62
9.2
620
pF
pF
pF
13
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
4.6
0.9
2.1
5.2
38
17
31
19
6.3
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate-Body leakage current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
I
F
=-12.5A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=-4.5V, V
DS
=-10V,
I
D
=-12.5A
V
GS
=-10V, V
DS
=-10V, R
L
=0.75
,
R
GEN
=3
m
V
GS
=-4.5V, I
D
=-3A
V
GS
=-2.5V, I
D
=-1A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-12.5A
I
DSS
μΑ
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-12.5A
V
DS
=-16V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=±10V
I
GSS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-12.5A, dI/dt=100A/
μ
s
I
D
=-250
μ
A, V
GS
=0V
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θ
JA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to case R
θ
JC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
I. Revision 0: July 2006
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOD421_001 | 功能描述:MOSFET P-CH 20V 12.5A TO252 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:邏輯電平柵極，2.5V 驅(qū)動 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時）:12.5A（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:75 毫歐 @ 12.5A，10V 不同 Id 時的 Vgs（th）（最大值）:1.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:4.6nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:620pF @ 10V 功率 - 最大值:2W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:TO-252，（D-Pak） 標(biāo)準(zhǔn)包裝:1 |
| AOD421_08 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AOD422 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD422L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD423 | 功能描述:MOSFET P-CH 30V 15A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:15A（Ta），70A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:6.2 毫歐 @ 20A，20V 不同 Id 時的 Vgs（th）（最大值）:3.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:65nC @ 10V 不同 Vds 時的輸入電容（Ciss）:2760pF @ 15V 功率 - 最大值:2.5W 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應(yīng)商器件封裝:TO-252，（D-Pak） 標(biāo)準(zhǔn)包裝:2,500 |
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