參數(shù)資料
型號: AOD409
廠商: ALPHA
元件分類: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -溝道增強型場效應(yīng)晶體管
文件頁數(shù): 1/5頁
文件大小: 185K
代理商: AOD409
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
16.7
40
1.9
Max
25
50
2.5
R
θ
JC
°C
V
V
±20
-26
-18
-60
30
2.5
1.6
A
-26
134
60
Gate-Source Voltage
Continuous Drain
Current
G
Drain-Source Voltage
-60
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Maximum
Units
Parameter
T
C
=25°C
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
P
DSM
A
mJ
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
P
D
W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Steady-State
Steady-State
°C/W
°C/W
W
T
A
=70°C
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
AOD409
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -60V
I
D
= -26A (V
GS
= -10V)
R
DS(ON)
< 40m
(V
GS
= -10V) @ -20A
R
DS(ON)
< 55m
(V
GS
= -4.5V)
General Description
The AOD409 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard Product
AOD409 is Pb-free (meets ROHS & Sony 259
specifications). AOD409L is a Green Product
ordering option. AOD409 and AOD409L are
electrically identical.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.
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