參數(shù)資料
型號: AOD408L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 1/4頁
文件大?。?/td> 160K
代理商: AOD408L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
16.7
40
1.9
Max
25
50
2.5
R
θ
JC
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±20
18
18
40
18
40
60
30
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
Gate-Source Voltage
Continuous Drain
Current
G
Drain-Source Voltage
Power Dissipation
B
T
C
=25°C
T
C
=100°C
P
D
Maximum
30
Units
T
C
=25°C
T
C
=100°C
W
A
P
DSM
°C
2.5
1.6
-55 to 175
I
D
A
mJ
W
AOD408
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 18A (V
GS
= 10V)
R
DS(ON)
< 18m
(V
GS
= 10V)
R
DS(ON)
< 27m
(V
GS
= 4.5V)
General Description
The AOD408 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in
PWM applications.
Standard Product AOD408 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD408L is a Green Product ordering option.
AOD408 and AOD408L are electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected
to Tab
Alpha & Omega Semiconductor, Ltd.
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