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參數(shù)資料
| 型號： | AOB436 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 132K |
| 代理商： | AOB436 |
193
18
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
10
41
1.9
Max
15
50
3
R
θ
JC
W
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±20
55
55
150
30
45
Gate-Source Voltage
Continuous Drain
Current
G
Drain-Source Voltage
25
Maximum
Units
Pulsed Drain Current
C
Avalanche Current
C
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
C
=25°C
T
C
=100°C
Repetitive avalanche energy L=0.1mH
C
I
D
Junction and Storage Temperature Range
A
P
D
°C
50
25
3
-55 to 175
A
mJ
W
T
A
=70°C
2.1
Power Dissipation
A
P
DSM
AOB436
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 25V
I
D
= 55A (V
GS
= 10V)
R
DS(ON)
< 7 m
(V
GS
= 10V)
R
DS(ON)
< 11 m
(V
GS
= 4.5V)
General Description
The AOB436 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product
AOB436 is Pb-free (meets ROHS & Sony
259 specifications). AOB436L is a Green Product
ordering option. AOB436 and AOB436L are
electrically identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AOB436L | N-Channel Enhancement Mode Field Effect Transistor |
| AOB438 | N-Channel Enhancement Mode Field Effect Transistor |
| AOB438L | N-Channel Enhancement Mode Field Effect Transistor |
| AOD400 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD400L | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOB436L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOB438 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOB438L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOB440 | 功能描述:MOSFET N-CH 60V 75A D2PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AOB442 | 功能描述:MOSFET N-CH 40V 21A TO263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SDMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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