參數(shù)資料
型號(hào): AOD400L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁數(shù): 1/5頁
文件大?。?/td> 132K
代理商: AOD400L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
17.4
50
4
Max
30
60
7.5
R
θ
JC
W
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±12
10
10
40
15
30
Gate-Source Voltage
Continuous Drain
Current
G
Drain-Source Voltage
30
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
Maximum
Units
T
C
=25°C
T
C
=100°C
I
D
Junction and Storage Temperature Range
A
P
D
°C
20
10
2.1
-55 to 175
A
mJ
W
T
A
=70°C
1.3
Power Dissipation
A
P
DSM
AOD400
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 10 A (V
GS
= 10V)
R
DS(ON)
< 30 m
(V
GS
= 10V)
R
DS(ON)
< 36 m
(V
GS
= 4.5V)
R
DS(ON)
< 52 m
(V
GS
= 2.5V)
General Description
The AOD400 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard
Product AOD400 is Pb-free (meets ROHS & Sony
259 specifications). AOD400L is a Green Product
ordering option. AOD400 and AOD400L are
electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
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