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參數(shù)資料
| 型號： | AO9926EL |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 116K |
| 代理商： | AO9926EL |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
48
74
35
Max
62.5
110
40
R
θ
JL
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
±8
8
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Drain-Source Voltage
20
Maximum
Units
V
V
Parameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
6.4
30
2
1.28
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
A
P
D
°C
-55 to 150
I
D
AO9926E
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 8A (V
GS
= 4.5V)
R
DS(ON)
< 21m
(V
GS
= 4.5V)
R
DS(ON)
< 25m
(V
GS
= 2.5V)
R
DS(ON)
< 33m
(V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AO9926E uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
Standard Product
AO9926E is Pb-free (meets ROHS & Sony 259
specifications). AO9926EL is a Green Product
ordering option. AO9926E and AO9926EL are
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
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