參數(shù)資料
型號(hào): AOB403
廠商: ALPHA
元件分類: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 174K
代理商: AOB403
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
10
45
1.35
Max
12
55
1.8
R
θ
JC
Maximum Junction-to-Case
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
W
T
A
=70°C
1.45
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
T
A
=25°C
P
DSM
2.2
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
T
C
=25°C
T
C
=100°C
P
D
W
Avalanche Current
C
Continuous Drain
Current
Pulsed Drain Current
C
Maximum
-60
±20
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
Gate-Source Voltage
-30
-20
-60
-26
134
83
°C
42
A
AOB403
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -60V
I
D
= -30A (V
GS
=
-
10V)
R
DS(ON)
< 44m
(V
GS
= -10V ) @ 30A
R
DS(ON)
< 55m
(V
GS
= -4.5V ) @ 20A
General Description
The AOB403 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the D2-PAK package, this device is well suited for
high current load applications.
Standard product
AOB403 is Pb-free (meets ROHS & Sony 259
specifications). AOB403L is a Green Product ordering
option. AOB403 and AOB403L are electrically
identical.
G
D
S
G D S
TO-263
D2-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
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