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參數(shù)資料
| 型號(hào)： | AO8846 |
| 廠商： | ALPHA |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 常見的漏雙N溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 214K |
| 代理商： | AO8846 |
AO8846
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
= 55°C
I
GSS
V
GS(th)
I
D(ON)
±10
1
μ
A
0.5
25
12
16
12
13
14
15
0.7
V
A
16
22
16.2
17
18
21
34
0.62
20
28
20
21
22
27
T
J
=125°C
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
S
V
A
1
1.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
1295
160
87
1.8
1650
pF
pF
pF
k
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
10
4.2
2.6
6.4
12.4
42
15
31
6.8
13
nC
nC
nC
ns
ns
ns
ns
41
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Output Capacitance
Reverse Transfer Capacitance
Gate Drain Charge
Turn-On DelayTime
V
GS
= 4.5V, V
DS
= 10V, I
D
= 7A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=4.5V, V
DS
=10V, R
L
=1.4
,
R
GEN
=3
m
Maximum Body-Diode Continuous Current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
= 1.8V, I
D
= 6.0A
V
DS
= 4.5V, I
D
= 7.0A
I
S
= 1A,V
GS
= 0V
V
GS
= 4.0V, I
D
= 7.0A
V
GS
= 3.1V, I
D
= 6.5A
V
GS
= 2.5V, I
D
= 6.5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
= V
GS
I
D
= 250
μ
A
V
GS
= 4.5V, V
DS
= 5V
V
GS
= 4.5V, I
D
= 7.0A
V
DS
= 20V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=7A, dI/dt=100A/
μ
s, V
GS
=-9V
I
D
= 250
μ
A, V
GS
= 0V
I
F
=7A, dI/dt=100A/
μ
s, V
GS
=-9V
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
= 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev0 August 2007
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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