參數(shù)資料
型號： AO8846
廠商： ALPHA
英文描述： Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 常見的漏雙N溝道增強(qiáng)型場效應(yīng)晶體管
文件頁數(shù)： 1/4頁
文件大?。?/td> 214K
代理商： AO8846
Symbol
V
DS
V
GS
10 Sec
Steady State
20
7
5.7
4.8
5.7
I
DM
1.5
1.0
1.0
0.7
T
J
, T
STG
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Symbol
Typ
64
89
53
Max
83
120
70
t
≤
10s
Steady State
Steady State
R
θ
JL
±8
°C/W
°C/W
R
θ
JA
°C
-55 to 150
25
A
P
D
W
Maximum Junction-to-Lead
C
Thermal Characteristics
Units
°C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Junction and Storage Temperature Range
T
A
=70°C
Units
V
V
T
A
=25°C
T
A
=70°C
I
D
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
AO8846
Common-Drain Dual N-Channel Enhancement Mode
Field Effect Transistor
Features
V
DS
= 20V
I
D
= 7.0A (V
GS
= 4.5V)
R
DS(ON)
< 20m
(V
GS
= 4.5V)
R
DS(ON)
< 20m
(V
GS
= 4.0V)
R
DS(ON)
< 21m
(V
GS
= 3.1V)
R
DS(ON)
< 22m
(V
GS
= 2.5V)
R
DS(ON)
< 27m
(V
GS
= 1.8V)
General Description
The AO8846 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It is ESD
protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilitated by its
common-drain configuration.
Standard Product AO8846
is Pb-free (meets ROHS & Sony 259 specifications).
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
D1
S1
D2
G1
1.8K
S2
G2
1.8K
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相關(guān)PDF資料
PDF描述
AO9926A Circular Connector; No. of Contacts:8; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:17-8 RoHS Compliant: No
AO9926B Dual N-Channel Enhancement Mode Field Effect Transistor
AO9926BL Dual N-Channel Enhancement Mode Field Effect Transistor
AO9926E Dual N-Channel Enhancement Mode Field Effect Transistor
AO9926EL Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO9926 制造商:ALPHA 制造商全稱:ALPHA 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
AO9926A 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
AO9926B 功能描述:MOSFET DUAL N-CH 20V 7.6A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AO9926B_11 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual N-Channel MOSFET
AO9926BL 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
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