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參數(shù)資料
| 型號(hào)： | AO8804 |
| 廠商： | ALPHA |
| 英文描述： | LJT 6C 6#12 SKT WALL RECP |
| 中文描述： | 常見(jiàn)的漏雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 379K |
| 代理商： | AO8804 |
AO8804
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
20
V
10
25
10
T
J
=55°C
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
μ
A
±12
0.5
30
V
V
A
0.75
1
10
13.3
11.5
15.4
22.2
36
0.73
13
16
14
19
27
T
J
=125°C
m
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
1
2.4
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
1810
232
200
1.6
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
17.9
1.5
4.7
2.5
7.2
49
10.8
20.2
8
nC
nC
nC
ns
ns
ns
ns
ns
nC
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=4.5V, V
DS
=10V, I
D
=8A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
I
S
=1A,V
GS
=0V
V
GS
=0V, V
DS
=10V, f=1MHz
Zero Gate Voltage Drain Current
V
GS
=1.8V, I
D
=3A
V
DS
=5V, I
D
=8A
Forward Transconductance
Diode Forward Voltage
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8A
V
DS
=16V, V
GS
=0V
V
DS
=0V, V
GS
=±10V
V
DS
=0V, I
G
=±250uA
V
GS
=2.5V, I
D
=4A
m
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
On state drain current
I
D
=250
μ
A, V
GS
=0V
I
DSS
μ
A
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/
μ
s
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=10V, R
L
=1.2
,
R
GEN
=3
I
F
=8A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
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| AO8804_09 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8804_100 | 功能描述:MOSFET 2N-CH 20V 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過(guò)期 FET 類型:2 N 溝道（雙）共漏 FET 功能:邏輯電平門 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:- 不同?Id，Vgs 時(shí)的?Rds On（最大值）:13 毫歐 @ 8A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:1V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:17.9nC @ 4.5V 不同 Vds 時(shí)的輸入電容（Ciss）:1810pF @ 10V 功率 - 最大值:1.5W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商器件封裝:8-TSSOP 標(biāo)準(zhǔn)包裝:1 |
| AO8804L | 功能描述:MOSFET 2N-CH 20V 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過(guò)期 FET 類型:2 N 溝道（雙）共漏 FET 功能:邏輯電平門 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:- 不同?Id，Vgs 時(shí)的?Rds On（最大值）:13 毫歐 @ 8A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:1V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:17.9nC @ 4.5V 不同 Vds 時(shí)的輸入電容（Ciss）:1810pF @ 10V 功率 - 最大值:1.5W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商器件封裝:8-TSSOP 標(biāo)準(zhǔn)包裝:1 |
| AO8806 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8806_07 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
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