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參數(shù)資料
| 型號： | AO8803 |
| 廠商： | ALPHA |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙P溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 121K |
| 代理商： | AO8803 |
AO8803
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-12
V
-1
-5
±1
±10
-1
T
J
=55°C
μ
A
μ
A
V
GS(th)
I
D(ON)
-0.3
-20
-0.55
A
15
19
18
22
28
34
18
23
22
29
T
J
=125°C
m
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-0.78
-1
-2.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
3960
910
757
6.9
4750
pF
pF
pF
8.5
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
36.6
3.4
10
15
43
158
95
49
19.4
44
nC
nC
nC
ns
ns
ns
ns
60
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-7A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-9.6V, V
GS
=0V
V
GS
=-1.5V, I
D
=-1A
V
DS
=-5V, I
D
=-7A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-7A
Reverse Transfer Capacitance
Gate resistance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=±4.5V
I
GSS
m
V
GS
=-2.5V, I
D
=-6A
V
GS
=-1.8V, I
D
=-5A
I
S
=-1A,V
GS
=0V
I
F
=-7A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-6V, f=1MHz
V
GS
=-4.5V, V
DS
=-6V, I
D
=-7A
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
GS
=-4.5V, V
DS
=-6V, R
L
=0.86
,
R
GEN
=3
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate-Body leakage current
V
GS
=0V, V
DS
=0V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : September 2005
Alpha & Omega Semiconductor, Ltd.
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| AO8803L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
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| AO8804_09 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8804_100 | 功能描述:MOSFET 2N-CH 20V 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 N 溝道（雙）共漏 FET 功能:邏輯電平門 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時）:- 不同?Id，Vgs 時的?Rds On（最大值）:13 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:1V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:17.9nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:1810pF @ 10V 功率 - 最大值:1.5W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商器件封裝:8-TSSOP 標準包裝:1 |
| AO8804L | 功能描述:MOSFET 2N-CH 20V 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 N 溝道（雙）共漏 FET 功能:邏輯電平門 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時）:- 不同?Id，Vgs 時的?Rds On（最大值）:13 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:1V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:17.9nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:1810pF @ 10V 功率 - 最大值:1.5W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商器件封裝:8-TSSOP 標準包裝:1 |
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