參數(shù)資料
型號： AO4443L
廠商： ALPHA
元件分類： MOSFETs
英文描述： P-Channel Enhancement Mode Field Effect Transistor
中文描述： 的P -溝道增強型場效應(yīng)晶體管
文件頁數(shù)： 2/4頁
文件大?。?/td> 119K
代理商： AO4443L
AO4443
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-40
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1
-20
-1.9
33.3
54
48
14
-0.75
42
68
63
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
S
V
A
-1
-6
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
657
143
63
6.5
pF
pF
pF
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
14.2
7.1
2.2
4.1
7.7
8
26.5
11.5
21.9
14.9
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-6A, dI/dt=100A/
μ
s
I
F
=-6A, dI/dt=100A/
μ
s
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-20V, R
L
=3.7
,
R
GEN
=3
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-20V, I
D
=-6A
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=-20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-6A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=-10V, I
D
=-6A
m
V
GS
=-4.5V, I
D
=-5A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
=±20V
Drain-Source Breakdown Voltage
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-32V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
value in any a given application depends on the user's specific board design. The current rating is based on the t
curve provides a single pulse rating.
Rev 1 : Aug 2005
≤
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
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PDF描述
AO4444 N-Channel Enhancement Mode Field Effect Transistor
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參數(shù)描述
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