參數(shù)資料
型號: AO4443L
廠商: ALPHA
元件分類: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -溝道增強(qiáng)型場效應(yīng)晶體管
文件頁數(shù): 1/4頁
文件大小: 119K
代理商: AO4443L
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
24
54
21
Max
40
75
30
R
θ
JL
Junction and Storage Temperature Range
A
P
D
°C
3.1
2
-55 to 150
T
A
=70°C
I
D
-6.5
-5
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum
-40
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±20
Gate-Source Voltage
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
t
10s
R
θ
JA
AO4443
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -40V
I
D
= -6.5 A (V
GS
= -10V)
R
DS(ON)
< 42m
(V
GS
= -10V)
R
DS(ON)
< 63m
(V
GS
= -4.5V)
General Description
The AO4443 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications.
Standard Product
AO4443 is Pb-free (meets ROHS & Sony 259
specifications). AO4443L is a Green Product
ordering option. AO4443 and AO4443L are
electrically identical.
SOIC-8
Top View
G
D
S
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd.
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