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參數(shù)資料
| 型號(hào)： | AO4435 |
| 廠商： | ALPHA |
| 英文描述： | 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 4K; RAM: 256; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A) |
| 中文描述： | 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 177K |
| 代理商： | AO4435 |
AO4435
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
= 55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1.7
-80
-2.3
15
22
27
22
18
27
36
T
J
=125°C
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
-0.74
-1
-3.5
C
iss
C
oss
C
rss
R
g
5.8 8
SWITCHING PARAMETERS
Total Gate Charge
1130
240
155
1400
pF
pF
pF
Q
g(10V)
Q
g(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
18
9.5
5.5
3.3
8.7
8.5
18
7
25
12
24
nC
nC
nC
ns
ns
ns
ns
30
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=0V, V
DS
=-15V, f=1MHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-15V, R
L
=1.5
,
R
GEN
=3
Turn-On DelayTime
m
V
GS
=-10V, V
DS
=-15V, I
D
=-10A
Maximum Body-Diode Continuous Current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
I
S
= -1A,V
GS
= 0V
V
DS
= -5V, I
D
= -10A
V
GS
= -5V, I
D
= -5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
= V
GS
I
D
= -250
μ
A
V
GS
= -10V, V
DS
= -5V
V
GS
= -10V, I
D
= -10A
V
DS
= -30V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-10A, dI/dt=100A/
μ
s
I
D
= -250
μ
A, V
GS
= 0V
I
F
=-10A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
= 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t
≤
10s thermal resistance rating.
G. E
AR
and I
AR
ratings are based on low frequency and duty cycles to keep T
j
=25C.
Rev0: Aug. 2007
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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