參數(shù)資料
型號: AMMC-5040
元件分類: 放大器
英文描述: 20000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: DIE
文件頁數(shù): 4/11頁
文件大小: 201K
代理商: AMMC-5040
2
AMMC-5040 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
V
D1,2-3-4
Drain Supply Operating Voltage
V
2
4.5
5
I
D1
First Stage Drain Supply Current (V
DD = 4.5 V, VG1 = -0.5 V)
mA
50
ID2-3-4
Total Drain Supply Current for Stages 2, 3 and 4 (VDD = 4.5 V, VGG= -0.5 V)
mA
225
VG1,2-3-4
Gate Supply Operating Voltages (IDD = 300 mA)
V
-0.45
VP
Pinch-off Voltage (VDD = 4.5 V, IDD < 10 mA)
V
-1.5
θ
ch-b
Thermal Resistance[2] (Backside Temp. T
b = 25°C)
°C/W
49
Notes:
1. Measured in wafer form with Tchuck = 25°C (except θ ch-bs.)
2. Channel-to-backside Thermal Resistance (
θ
ch-b) = 58°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance at
backside temperature (T
b) = 25°C calculated from measured data.
RF Specifications[3,4] (VDD = 4.5V, IDD (Q) = 300 mA, Z0 = 50)
Units
Broadband
Narrow Band Typical Performance
GHz
21 – 40
21 – 24
27– 29
37– 40
40– 45
Symbol
Parameters and Test Conditions
Min.
Typ.
Typical
|S
21|
2
Small-signal Gain
dB
20
25
25.5
25
22.4
21.3
|S
21|
2
Small-signal Gain Flatness
dB
±1.5
±0.2
±0.4
±0.2
±1.2
RLin
Input Return Loss
dB
15
17
18
21
17
RLout
Output Return Loss
dB
8
11
10
14
13
P-1dB
Output Power @ 1 dB Gain Compression
dBm
19.5
20
22.5
21
20
f = 22 GHz
P-3dB
Output Power @ 3 dB Gain Compression, f = 22 GHz
dBm
21
21.6
23.5
22.5
21.5
OIP3
Output 3rd Order Intercept Point,
dBm
30
29
31
27
f = 2 MHz, P
in = -8 dBm, f = 22 GHz
|S12|
2
Isolation
dB
40
55
Notes:
3. Data measured in wafer form, Tchuck = 25°C.
4. 100% on-wafer RF test is done at frequency = 21, 24, 27, 29, 37, 40 and 45 GHz, except as noted.
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