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參數(shù)資料
| 型號(hào)： | AM42BDS640AGTD8IS |
| 廠(chǎng)商： | SPANSION LLC |
| 元件分類(lèi)： | 存儲(chǔ)器 |
| 英文描述： | Circular Connector; No. of Contacts:13; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:11-35 RoHS Compliant: No |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA93 |
| 封裝： | 8 X 11.60 MM, FBGA-93 |
| 文件頁(yè)數(shù)： | 51/72頁(yè) |
| 文件大?。?/td> | 1060K |
| 代理商： | AM42BDS640AGTD8IS |
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50
Am42BDS640AG
November 1, 2002
P R E L I M I N A R Y
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. In asynchronous timing, addresses are latched on the falling edge of WE#. In synchronous mode, addresses are latched on the
first of either the rising edge of AVD# or the active edge of CLK.
3. See the “Flash Erase And Programming Performance” section for more information.
4. Does not include the preprogramming time.
Parameter
Description
All Speed
Options
Unit
JEDEC
Standard
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
80
ns
t
AVWL
t
AS
Address Setup Time
(Note 2)
Synchronous
Min
5
ns
Asynchronous
0
t
WLAX
t
AH
Address Hold Time
(Note 2)
Synchronous
Min
7
ns
Asynchronous
45
t
ACS
t
ACH
t
DS
t
DH
t
GHWL
t
CAS
t
CH
t
WP
t
WPH
t
SR/W
t
WHWH1
t
WHWH1
Address Setup Time to CLK (Note 2)
Min
5
ns
Address Hold Time to CLK (Note 2)
Min
7
ns
t
DVWH
t
WHDX
t
GHWL
Data Setup Time
Min
45
ns
Data Hold Time
Min
0
ns
Read Recovery Time Before Write
Min
0
ns
CE# Setup Time to AVD#
Min
0
ns
t
WHEH
t
WLWH
t
WHWL
CE# Hold Time
Min
0
ns
Write Pulse Width
Min
50
ns
Write Pulse Width High
Min
30
ns
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 3)
Typ
8
μs
Accelerated Programming Operation (Note 3)
Typ
2.5
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Notes 3, 4)
Typ
0.2
sec
Chip Erase Operation (Notes 3, 4)
26.8
t
VID
t
VIDS
t
VCS
t
CSW1
t
CSW2
t
CHW
t
CS
t
AVSW
t
AVHW
t
AVHC
t
AVDP
V
ACC
Rise and Fall Time
V
ACC
Setup Time (During Accelerated Programming)
V
CC
Setup Time
Clock Setup Time to WE# (Asynchronous)
Min
500
ns
Min
1
μs
Min
50
μs
Min
5
ns
Clock Setup Time to WE# (Synchronous)
Min
1
ns
Clock Hold Time from WE#
Min
1
ns
t
ELWL
CE# Setup Time to WE#
Min
0
ns
AVD# Setup Time to WE#
Min
5
ns
AVD# Hold Time to WE#
Min
5
ns
AVD# Hold Time to CLK
Min
5
ns
AVD# Low Time
Min
12
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM42BDS640AGTD8IT | Circular Connector; No. of Contacts:13; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:11-35 RoHS Compliant: No |
| AM42BDS640AGBD8IS | RES 93.1K-OHM 0.1% 0.125W 50PPM THIN-FILM SMD-1206 TR-7-PL ROHS |
| AM42BDS640AGBD8IT | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM42BDS640AGTD9IS | LJT 13C 13#22D SKT WALL RECP |
| AM42BDS640AGTD9IT | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM42BDS640AGTD8IT | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM |
| AM42BDS640AGTD9IS | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM |
| AM42BDS640AGTD9IT | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM |
| AM42DL1612DB30IS | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
| AM42DL1612DB30IT | 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM |
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