參數資料
型號： AM42BDS640AGTC9IS
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： LJT 13C 13#22D PIN WALL RECP
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA93
封裝： 8 X 11.60 MM, FBGA-93
文件頁數： 37/72頁
文件大?。?/td> 1060K
代理商： AM42BDS640AGTC9IS
36
Am42BDS640AG
November 1, 2002
P R E L I M I N A R Y
FLASH DC CHARACTERISTICS
CMOS Compatible
Note:
1. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
2. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for t
ACC
+ 60 ns. Typical sleep mode current is equal to I
CC3
.
5. Total current during accelerated programming is the sum of V
ACC
and V
CC
currents.
Parameter Description
Test Conditions (Note 1)
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
±1
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
max
±1
μA
I
CCB
V
CC
Active Burst Read Current
CE# = V
IL
, OE# = V
IL
, WE# = V
IH
10
20
mA
I
IO1
V
IO
Active Read Current
V
IO
= 1.8 V, CE# = V
IL
, OE# = V
IL
,
WE# = V
IH
15
30
mA
I
IO2
V
IO
Non-active Output
V
IO
= 1.8 V, OE# = V
IH
0.2
10
μA
I
CC1
V
CC
Active Asynchronous Read
Current (Note 2)
CE# = V
IL
, OE# = V
IH
,
WE# = V
IH
5 MHz
12
16
mA
1 MHz
3.5
5
mA
I
CC2
V
CC
Active Write Current (Note 3)
CE# = V
IL
, OE# = V
IH
, V
PP
= V
IH
15
40
mA
I
CC3
V
CC
Standby Current (Note 4)
CE# = RESET# = V
CC
± 0.2 V
0.2
10
μA
I
CC4
V
CC
Reset Current
RESET# = V
IL,
CLK = V
IL
0.2
10
μA
I
CC5
V
CC
Active Current
(Read While Write)
CE# = V
IL
, OE# = V
IH
25
60
mA
I
ACC
Accelerated Program Current
(Note 5)
CE# = V
IL
, OE# = V
IH,
V
ACC
= 12.0 ± 0.5 V
V
ACC
7
15
mA
V
CC
5
10
mA
V
IL
Input Low Voltage
V
IO
= 1.8 V
–0.5
0.2
V
V
IH
Input High Voltage
V
IO
= 1.8 V
V
IO
– 0.2
V
IO
+ 0.2
V
V
OL
Output Low Voltage
I
OL
= 100 μA, V
CC
= V
CC
min
,
V
IO
= V
IO min
0.1
V
V
OH
Output High Voltage
I
OH
= –100 μA, V
CC
= V
CC
min
,
V
IO
= V
IO min
V
IO
– 0.1
V
V
ID
Voltage for Accelerated Program
11.5
12.5
V
V
LKO
Low V
CC
Lock-out Voltage
1.0
1.4
V
相關PDF資料
PDF描述
AM42BDS640AGTC9IT LJT 13C 13#22D SKT RECP
AM42BDS640AGTD8IS Circular Connector; No. of Contacts:13; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:11-35 RoHS Compliant: No
AM42BDS640AGTD8IT Circular Connector; No. of Contacts:13; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:11-35 RoHS Compliant: No
AM42BDS640AGBD8IS RES 93.1K-OHM 0.1% 0.125W 50PPM THIN-FILM SMD-1206 TR-7-PL ROHS
AM42BDS640AGBD8IT Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
相關代理商/技術參數
參數描述
AM42BDS640AGTC9IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTD8IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTD8IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTD9IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTD9IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
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