參數(shù)資料
型號: AM42BDS640AGTC9IS
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: LJT 13C 13#22D PIN WALL RECP
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA93
封裝: 8 X 11.60 MM, FBGA-93
文件頁數(shù): 36/72頁
文件大?。?/td> 1060K
代理商: AM42BDS640AGTC9IS
November 1, 2002
Am42BDS640AG
35
P R E L I M I N A R Y
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground:
All Inputs and I/Os except
as noted below (Note 1). . . . . . . –0.5 V to V
IO
+ 0.5 V
V
CC
f/V
CC
s (Note 1) . . . . . . . . . . . . .–0.5 V to +2.5 V
V
IO
. . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +1.95 V
ACC . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
Output Short Circuit Current (Note 3) . . . . . . 100 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During
voltage transitions, inputs or I/Os may undershoot V
SS
to
–2.0 V for periods of up to 20 ns during voltage transitions
inputs might overshoot to V
CC
+0.5 V for periods up to 20
ns. See Figure 6. Maximum DC voltage on input or I/Os is
V
CC
+ 0.5 V. During voltage transitions outputs may
overshoot to V
CC
+ 2.0 V for periods up to 20 ns. See
Figure 7.
2. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
3. Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; functional operation of the de-
vice at these or any other conditions above those indi-
cated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rat-
ing conditions for extended periods may affect device reli-
ability.
Figure 6.
Overshoot Waveform
Maximum Negative
Figure 7.
Overshoot Waveform
Maximum Positive
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . . –40°C to +85°C
Supply Voltages
V
CC
Supply Voltages . . . . . . . . . . .+1.65 V to +1.95 V
V
IO
Supply Voltages:
V
IO
V
CC
. . . . . . . . . . . . . . . . . . . +1.65 V to +1.95 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
20 ns
20 ns
V
+2.0 V
V
+0.5 V
20 ns
1.0 V
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AM42BDS640AGTC9IT LJT 13C 13#22D SKT RECP
AM42BDS640AGTD8IS Circular Connector; No. of Contacts:13; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:11-35 RoHS Compliant: No
AM42BDS640AGTD8IT Circular Connector; No. of Contacts:13; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:11-35 RoHS Compliant: No
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AM42BDS640AGTC9IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTD8IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTD8IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTD9IS 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
AM42BDS640AGTD9IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM