- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57871 > AM1011-075 (STMICROELECTRONICS) L BAND, Si, NPN, RF POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | AM1011-075 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, S036, AMPAC-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 143K |
| 代理商： | AM1011-075 |
September 1992
L-BAND AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
10:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 75 W MIN. WITH 9.2 dB GAIN
DESCRIPTION
The AM1011-075 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 10:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-075 is supplied in the AMPAC Her-
metic M etal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
BRANDING
1011-75
ORDER CODE
AM1011-075
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 100C)
175
W
IC
Device Current*
5.4
A
VCC
Collector-Supply Voltage*
55
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.86
°C/W
*Applies only to rated RF amplifier operation
AM1011-075
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM1011-075 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| AM1011-300 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| AM1011-500 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| AM13714530WM-SM-R | 13750 MHz - 14500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AM40-0023 | 1710 MHz - 1910 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM1011-300 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| AM1011-400 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| AM1011-500 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| AM-10132 | 功能描述:按鈕開關(guān) Unsealed OI-PB Sw RoHS:否 制造商:C&K Components 觸點形式:2 NC - 2 NO 開關(guān)功能:ON ? OFF 電流額定值:4 A 電壓額定值 AC:12 V to 250 V 電壓額定值 DC:12 V to 50 V 功率額定值: 安裝風(fēng)格:Through Hole 照明:Illuminated 照明顏色:None IP 等級:IP 40 端接類型:Solder 觸點電鍍:Silver 執(zhí)行器:Square 蓋顏色: 封裝: 可燃性等級:UL 94 V-0 |
| AM101-DP | 制造商:SEOUL 制造商全稱:Seoul Semiconductor 功能描述:Surface-mounted chip LED device |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。