參數(shù)資料
型號(hào)： AM1011-075
廠商： ADVANCED SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： 0.400 INCH, FLG(A), 2 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 78K
代理商： AM1011-075
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
65
V
BVCER
IC = 50 mA
RBE = 10
65
V
BVEBO
IE = 4.0 mA
3.5
V
ICES
VCE = 50 V
6.0
mA
hFE
VCE = 5.0 V
IC = 1.0 A
10
---
PG
η
C
VCC = 50 V
PIN = 9.0 W
f = 1090 MHz
9.2
48
9.7
56
dB
%
Pulse Width = 32 sec, Duty Cycle = 2%
NPN SILICON RF POWER TRANSISTOR
AM1011-075
DESCRIPTION:
The ASI AM1011-075 is a high power
Class C transistor designed for L-Band
Avionics pulse output and driver
applications.
FEATURES:
Internal Input/Output Matching Networks
P
G = 9.2 dB min. at 75 W/1090 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
5.4 A
VCC
55 V
PDISS
175 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θ
JC
0.86 °C/W
PACKAGE STYLE .400 2L FLG (A)
MINIMUM
inches / m m
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
M AXIM UM
.120 / 3.05
.130 / 3.30
.396 / 10.06
inches / mm
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M
.118 / 3.00
.131 / 3.33
.135 / 3.43
.145 / 3.68
.072 / 1.83
.052 / 1.32
P
.230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.100 / 2.54
.395 / 10.03
.407 / 10.34
.890 / 22.61
.910 / 23.11
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