參數(shù)資料
型號： AM1011-300
廠商： STMICROELECTRONICS
元件分類： 功率晶體管
英文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： 0.400 X 0.600 INCH, HERMETIC SEALED, METAL CERAMIC, M207, 2 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 441K
代理商： AM1011-300
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.400 x .600 2LFL (M207)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTING
.
LOW RF THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 325 W MIN. WITH 7.7 dB GAIN
.
1030/1090 MHZ OPERATION
DESCRIPTION
The AM1011-300 is a rugged, Class C common
base device specifically designed for new Mode-
S interrogator and transponder applications.
Minimal amplitude droop over the heavy Mode-S
pulse burst is guaranteed by a thermal design in-
corporating an overlay site-ballasted die geome-
try.
PIN CONNECTION
BRANDING
AM1011-300
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation
(TC
≤100°C)*
1070
W
IC
Device Current*
36
A
VCC
Collector-Supply Voltage*
43
V
TJ
Junction Temperature (Pulsed RF operation)
+250
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.14
°C/W
*Applies only to rated RF amplifier operation.
AM1011-300
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
ORDER CODE
AM1011-300
December 9, 1997
1/5
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