- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄1900 > ADUC814BRU (Analog Devices Inc)IC ADC 12BIT W/FLASH MCU 28TSSOP PDF資料下載
參數(shù)資料
| 型號(hào)： | ADUC814BRU |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 24/72頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC ADC 12BIT W/FLASH MCU 28TSSOP |
| 標(biāo)準(zhǔn)包裝： | 50 |
| 系列： | MicroConverter® ADuC8xx |
| 核心處理器： | 8052 |
| 芯體尺寸： | 8-位 |
| 速度： | 16.78MHz |
| 連通性： | I²C，SPI，UART/USART |
| 外圍設(shè)備： | POR，PSM，溫度傳感器，WDT |
| 輸入/輸出數(shù)： | 17 |
| 程序存儲(chǔ)器容量： | 8KB（8K x 8） |
| 程序存儲(chǔ)器類型： | 閃存 |
| EEPROM 大小： | 640 x 8 |
| RAM 容量： | 256 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 6x12b; D/A 2x12b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 125°C |
| 封裝/外殼： | 28-TSSOP（0.173"，4.40mm 寬） |
| 包裝： | 管件 |
| 配用： | EVAL-ADUC814QSZ-ND - KIT DEV FOR ADUC814 MICROCONVRTR |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)當(dāng)前第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)
ADuC814
Rev. A | Page 30 of 72
NONVOLITILE FLASH/EE MEMORY
FLASH/EE MEMORY OVERVIEW
The ADuC814 incorporates Flash/EE memory technology on-
chip to provide the user with nonvolatile, in-circuit reprogram-
mable code and data memory space.
Flash/EE memory takes the flexible in-circuit reprogrammable
features of EEPROM and combines them with the space efficient/
density features of EPROM (see Figure 32).
Because Flash/EE technology is based on a single transistor cell
architecture, a Flash memory array such as EPROM can be
implemented to achieve the space efficiencies or memory
densities required by a given design.
Like EEPROM, flash memory can be programmed in-system at
a byte level, although it must first be erased; the erase being
performed in page blocks. Thus, flash memory is often and
more correctly referred to as Flash/EE memory.
EEPROM
TECHNOLOGY
EPROM
TECHNOLOGY
FLASH/EE MEMORY
TECHNOLOGY
IN-CIRCUIT
REPROGRAMMABLE
SPACE EFFICIENT/
DENSITY
02748-A
-038
Figure 32. Flash/EE Memory Development
Incorporated in the ADuC814, Flash/EE memory technology
allows the user to update program code space in-circuit without
the need to replace one-time programmable (OTP) devices at
remote operating nodes.
FLASH/EE MEMORY AND THE ADUC814
The ADuC814 provides two arrays of Flash/EE memory for
user applications. There are 8 kbytes of Flash/EE program space
provided on-chip to facilitate code execution, therefore removing
the requirement for an external discrete ROM device. The pro-
gram memory can be programmed using conventional third-
party memory programmers. This array can also be programmed
in-circuit, using the serial download mode provided.
A 640-byte Flash/EE data memory space is also provided on-
chip. This may be used as a general-purpose nonvolatile
scratchpad area. User access to this area is via a group of six
SFRs. This space can be programmed at a byte level, although it
must first be erased in 4-byte pages.
ADUC814 FLASH/EE MEMORY RELIABILITY
The Flash/EE program and data memory arrays on the
ADuC814 are fully qualified for two key Flash/EE memory
characteristics: Flash/EE memory cycling endurance and
Flash/EE memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four
independent, sequential events:
1.
Initial page erase sequence
2.
Read/verify sequence
3.
Byte program sequence
4.
Second read/verify sequence
In reliability qualification, every byte in both the program and
data Flash/EE memory is cycled from 00H to FFH until a first
fail is recorded signifying the endurance limit of the on-chip
Flash/EE memory.
As indicated in the Specifications tables, the ADuC814 Flash/EE
memory endurance qualification has been carried out in accor-
dance with JEDEC Specification A117 over the industrial
temperature range of –40°C to +125°C. The results allow the
specification of a minimum endurance figure over supply and a
temperature of 100,000 cycles, with an endurance figure of
700,000 cycles being typical of operation at 25°C.
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the ADuC814 has
been qualified in accordance with the formal JEDEC Retention
Lifetime Specification (A117) at a specific junction temperature
(TJ = 55°C). As part of this qualification procedure, the Flash/EE
memory is cycled to its specified endurance limit described
above, before data retention is characterized. This means that
the Flash/EE memory is guaranteed to retain its data for its full
specified retention lifetime every time the Flash/EE memory is
reprogrammed. It should be noted that retention lifetime, based
on an activation energy of 0.6 eV, derates with TJ as shown in
40
60
70
90
TJ JUNCTION TEMPERATURE (°C)
RE
TE
NTION
(Y
e
a
rs
)
250
200
150
100
50
0
50
80
110
300
100
ADI SPECIFICATION
100 YEARS MIN.
AT TJ = 55°C
02748-A
-039
Figure 33. Flash/EE Memory Data Retention
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ADUC816BCP | IC MCU 8K FLASH ADC/DAC 56LFCSP |
| ADUC824BSZ-REEL | IC MCU 8K FLASH ADC/DAC 52MQFP |
| ADUC831BCPZ | IC MCU 62K FLASH ADC/DAC 56LFCSP |
| ADUC832BSZ-REEL | IC MCU 62K FLASH ADC/DAC 52MQFP |
| ADUC834BCPZ-REEL | IC MCU 62K FLASH ADC/DAC 56LFCSP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ADUC814BRU-REEL | 制造商:Analog Devices 功能描述:MCU 8-bit ADuC8xx 8052 CISC 8KB Flash 3V/5V 28-Pin TSSOP T/R 制造商:Analog Devices 功能描述:MCU 8BIT CISC 8KB FLASH 3.3V/5V 28TSSOP - Tape and Reel 制造商:Analog Devices Inc. 功能描述:8-bit Microcontrollers - MCU 12 BIT ADC WITH EMBEDDED 8-BIT MICRO I.C |
| ADUC814BRU-REEL7 | 制造商:Analog Devices 功能描述:MCU 8-Bit ADuC8xx 8052 CISC 8KB Flash 3V/5V 28-Pin TSSOP T/R 制造商:Analog Devices 功能描述:MCU 8BIT CISC 8KB FLASH 3.3V/5V 28TSSOP - Tape and Reel 制造商:Analog Devices Inc. 功能描述:8-bit Microcontrollers - MCU 12 BIT ADC WITH EMBEDDED 8-BIT MICRO I.C |
| ADUC814BRUZ | 功能描述:IC ADC 12BIT W/FLASH MCU 28TSSOP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 產(chǎn)品培訓(xùn)模塊:MCU Product Line Introduction XMEGA Introduction AVR XMEGA USB Connectivity 標(biāo)準(zhǔn)包裝:90 系列:AVR® XMEGA 核心處理器:AVR 芯體尺寸:8/16-位 速度:32MHz 連通性:I²C，IrDA，SPI，UART/USART 外圍設(shè)備:欠壓檢測(cè)/復(fù)位，DMA，POR，PWM，WDT 輸入/輸出數(shù):50 程序存儲(chǔ)器容量:192KB（96K x 16） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:4K x 8 RAM 容量:16K x 8 電壓 - 電源 (Vcc/Vdd):1.6 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 16x12b; D/A 2x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:64-TQFP 包裝:托盤 配用:ATSTK600-RC14-ND - STK600 SOCKET/ADAPTER 64TQFPATSTK600-TQFP64-ND - STK600 SOCKET/ADAPTER 64-TQFPATAVRONEKIT-ND - KIT AVR/AVR32 DEBUGGER/PROGRMMRATAVRISP2-ND - PROGRAMMER AVR IN SYSTEM |
| ADUC814BRUZ-REEL | 功能描述:IC MCU 8K FLASH ADC/DAC 28-TSSOP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 標(biāo)準(zhǔn)包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設(shè)備:欠壓檢測(cè)/復(fù)位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲(chǔ)器容量:4KB（4K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
| ADUC814BRUZ-REEL7 | 功能描述:IC MCU 8K FLASH ADC/DAC 28-TSSOP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:MicroConverter® ADuC8xx 標(biāo)準(zhǔn)包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設(shè)備:欠壓檢測(cè)/復(fù)位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲(chǔ)器容量:4KB（4K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。