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ADP3401
–9–
REV. 0
ANALOG GND
DIGITAL AND
SIM GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
2.2
m
F
100nF
28
27
26
25
23
22
21
20
19
18
17
16
15
ADP3401
100
V
10
m
F
R1
CHARGER INPUT
R2
BACKUP COIN CELL
10
m
F
SIM PIN OF
GSM PROCESSOR
2.2
m
F
10
m
F
24
0.22
m
F
100nF
10
m
F
CLK TO SIMCARD
RST TO SIMCARD
I/O TO SIM CARD
100nF
1 Li-ION OR
3 NiMH
CELLS
GSM
PROCESSOR
GSM
PROCESSOR
VBAT
VCC
PWRONKEY
ANALOGON
PWRONIN
ROWX
CHRON
VRTC
CAP–
SIMBAT
DATAIO
RESETIN
CLKIN
SIMGND
AGND
VCCA
REFOUT
VTCXO
DGND
RESCAP
CAP+
VSIM
CLK
SIMON
SIMPROG
RST
I/O
RESET
Figure 15. Typical Application Circuit
FREQUENCY – Hz
600
500
010
100k
100
V
1k
10k
400
300
200
100
FULL LOAD
MLCC CAPS
VCCA
TCXO
REF
Figure 14. Output Noise Density
THEORY OF OPERATION
The ADP3401 is a power management chip optimized for use with
the AD20msp425 GSM baseband chipsets in handset applications.
Figure 1 shows a functional block diagram of the ADP3401.
The ADP3401 contains several blocks:
Four Low Dropout Regulators (Digital, Analog, Crystal
Oscillator, Real-Time Clock)
Reset Generator
Buffered Precision Reference
SIM Interface Logic Level Translation (3 V/5 V)
SIM Voltage Supply
Power-On/-Off Logic
Undervoltage Lockout
These functions have traditionally been done as either a discrete
implementation or a custom ASIC design. ADP3401 combines
the benefits of both worlds by providing an integrated standard
product solution where every block is optimized to operate in a
GSM environment while maintaining a cost-competitive solution.
Figure 15 shows the external circuitry associated with the
ADP3401. Only a few support components, mainly decoupling
capacitors, are required.
Input Voltage
The input voltage range for ADP3401 is 3 V to 7 V and optimized
for a single Li-Ion cell or three NiMH/NiCd cells. The ADP3401
uses Analog Devices’ patented package thermal enhancement
technology, which allows 15% improvement in power handling
capability over standard plastic packages. The thermal impedance
(
θ
JA
) of the ADP3401 is 60
°
C/W. The charging voltage for a high
capacity NiMH cell can be as high as 5.5 V. Power dissipation
should be calculated at maximum ambient temperatures and
battery voltage in order not to exceed the 125
°
C maximum allow-
able junction temperature. Figure 16 shows the maximum total
LDO output current as a function of ambient temperature and
battery voltage.
However, high battery voltages normally occur only when the
battery is being charged and the handset is not in conversation
mode. In this mode there is a relatively light load on the LDOs.
A fully charged Li-Ion battery is 4.25 V, where the LDOs deliver
the maximum 240 mA up to the max 85
°
C ambient temperature.