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參數(shù)資料
| 型號(hào)： | A48P4616 |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | CAP 330PF 50V CERAMIC MONO 5% |
| 中文描述： | 16米x 16位DDR內(nèi)存 |
| 文件頁數(shù)： | 52/71頁 |
| 文件大?。?/td> | 2068K |
| 代理商： | A48P4616 |
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A48P4616
Preliminary (September, 2005, Version 0.0)
51
AMIC Technology, Corp.
Normal Strength Driver Pulldown and Pullup Characteristics
1. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the
outer bounding lines of the V-I curve.
2. It is recommended that the “typical” IBIS pulldown V-I curve lie within the shaded region of the V-I curve.
3. The full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve.
4. It is recommended that the “typical” IBIS pullup V-I curve lie within the shaded region of the V-I curve.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to
source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the “typical” IBIS pullup to “typical” IBIS pulldown current should be unity ± 10%, for device
drain to source voltages from 0.1 to 1.0. This specification is a design objective only. It is not guaranteed.
7. These characteristics are intended to obey the SSTL_2 class II standard.
8. This specification is intended for DDR SDRAM only.
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