參數(shù)資料
型號(hào)： A43E06321G-75F
廠商： AMIC Technology Corporation
英文描述： General Purpose
中文描述： 為512k × 32位× 2銀行低功耗同步DRAM
文件頁(yè)數(shù)： 34/46頁(yè)
文件大小： 1351K
代理商： A43E06321G-75F
A43E06321
PRELIMINARY (July, 2005, Version 0.0)
33
AMIC Technology, Corp.
Write Interrupted by Precharge Command & Write Burst Stop Cycle (@ Burst Length = Full Page)
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active
(A-Bank)
: Don't care
RAa
A10/AP
CAa
RAa
WE
DQM
DAa4
DAa3
DAa1
DAa2
DAb0
DAb1
DAb2
DAb3
DQ
Precharge
(A-Bank)
Write
(A-Bank)
CAb
Write
(A-Bank)
Burst Stop
* Note 1
* Note 1
* Note 2
DAa0
DAb4
DAb5
t
RDL
t
BDL
* Note 3
* Note : 1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. Data-in at the cycle of burst stop command cannot be written into corresponding memory cell.
It is defined by AC parameter of tBDL(=1CLK).
3. Data-in at the cycle of interrupted by precharge cannot be written into the corresponding memory cell.
It is defined by AC parameter of tRDL(=2CLK).
DQM at write interrupted by precharge command is needed to ensure tRDL of 2CLK.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst.
Input data after Row precharge cycle will be masked internally.
4. Burst stop is valid only at every burst length.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A43E06321G-75UF 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
A43E06321G-95F 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
A43E06321G-95UF 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
A43E0632G-75I 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM
A43E0632G-95I 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM
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