參數(shù)資料
型號(hào): A43E06161V-95F
廠商: AMIC Technology Corporation
英文描述: 512K X 16 Bit X 2 Banks Synchronous DRAM
中文描述: 為512k × 16位× 2銀行同步DRAM
文件頁(yè)數(shù): 26/46頁(yè)
文件大小: 1289K
代理商: A43E06161V-95F
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
25
AMIC Technology, Corp.
Page Read & Write Cycle at Same Bank @Burst Length=4
t
RDL
High
t
RCD
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
WE
DQM
DQ
(CL=2)
Row Active
(A-Bank)
Read
(A-Bank)
Precharge
(A-Bank)
: Don't care
*Note 2
Ra
Ca0
Cb0
Cc0
Ra
A10/AP
Qa0
Qa1
Qb0
Qb1
Dc0
Dc1
Dd0
Dd1
Qa0
Qa1
Qb0
Write
(A-Bank)
Cd0
t
CDL
*Note 2
*Note1
*Note3
Dc0
Dc1
Dd0
Dd1
Read
(A-Bank)
Write
(A-Bank)
DQ
(CL=3)
*Note :
1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus contention.
2. Row precharge will interrupt writing. Last data input, t
RDL
before Row precharge, will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data
after Row precharge cycle will be masked internally.
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A43E06161V-95U 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-95UF 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM
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A43E0616G-95I 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM
A43E0616V-75I 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM