參數(shù)資料
型號: 5962D1022901QXC
元件分類: DRAM
英文描述: 64M X 40 SYNCHRONOUS DRAM, 5.4 ns, CQFP128
封裝: CERAMIC, QFP-128
文件頁數(shù): 37/68頁
文件大?。?/td> 1475K
代理商: 5962D1022901QXC
42
Electrical Specifications
ABSOLUTE MAXIMUM RATINGS
(Referenced to VSS)
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.
RECOMMENDED OPERATING CONDITIONS
(Referenced to VSS)
OPERATIONAL ENVIRONMENT SPECIFICATIONS
SYMBOL
PARAMETER
LIMITS
VDD and VDDQ
DC supply voltage
-1.0 to +4.3V
VIN, VOUT
Voltage on any pin relative to VSS
-0.3 to VDD +0.3V
TSTG
Storage temperature
-65 to +150
°C
PD
Maximum power dissipation
5W
TJ
Maximum junction temperature
+125oC
OJC
Thermal resistance, junction-to-case
TBDoC/W
SYMBOL
PARAMETER
LIMITS
VDD and VDDQ
Positive supply voltage
3.0 to 3.6V
TC
Case temperature range
-40 to 105oC
VIN
DC input voltage
0V to VDDQ
TOTAL DOSE
100K
RAD(SI)
Heavy Ion Event Rate2
1.1 E-10
Events/Bit-Day
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