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參數(shù)資料
| 型號： | 4GBL06 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 橋式整流 |
| 英文描述： | 4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 4GBL06 |
4GBL Series
4
Bulletin I2716 rev. F 06/03
www.irf.com
Fig. 2 - Forward Voltage Drop Characteristics
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Voltage (V)
Instantaneous
Forward
Current
(A)
Maximum
Allowable
Case
Temperature
(°C)
Average Forward Current (A)
Number of Equal Amplitude Half Cycle Current Pulses (N)
Peak
Half
Sine
Wave
Forward
Current
(A)
Fig. 3 - Total Power Loss Characteristics
Maximum
Average
Forward
Power
Loss
(W)
Average Forward Current (A)
20
40
60
80
100
120
140
160
0
1234
5
180
(Sine)
180
(Rect)
4GBL Series
40
60
80
100
120
140
160
1
10
100
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
4GBL Series
0.1
1
10
100
1000
0
0.5
1
1.5
2
2.5
3
3.5
T = 25C
J
T = 150C
J
4GBL Series
0
1
2
3
4
5
6
7
01
23
4
180
(Sine)
180
(Rect)
4GBL Series
T
= 150C
J
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