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參數(shù)資料
| 型號： | 4GBL06 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 橋式整流 |
| 英文描述： | 4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 4GBL06 |
4GBL Series
2
Bulletin I2716 rev. F 06/03
www.irf.com
I
O
Maximum DC output current
4
A
T
C = 50°C, Resistive & inductive load
3.2
TC = 50°C, Capacitive load
I
FSM
Maximum peak, one-cycle
150
t = 10ms, 20ms
non-repetitive surge current,
following any rated load condition
158
t = 8.3ms, 16.7ms
T
J = 150°C
and with rated VRRM reapplied
I2t
Maximum I2t for fusing,
113
A2s
t = 10ms
initial T
J = TJ max
104
t = 8.3ms
V
FM
Maximum peak forward voltage
0.975
V
T
J = 25
o
C, I
FM = 4A
per diode
IRM
Typical peak reverse leakage
5
A
T
J = 25
o
C, 100% VRRM
curren t per diode
VRRM
Maximum repetitive peak
50 to 800
V
reverse voltage range
Forward Conduction
Voltage V
RRM, max repetitive VRMS, maximum
V
RSM, max non-repetitive
I
RRM max.
I
RRM max.
Type number
Code
peak rev. voltage
RMS voltage
reverse voltage
@ rated V
RRM
@ rated V
RRM
T
J = TJ max.
T
J = TJ max.
T
J = TJ max.
T
J = 25°C
T
J = 150°C
VV
V
A
4GBL
005
50
35
75
5
400
01
100
70
150
5
400
02
200
140
275
5
400
04
400
280
500
5
400
06
600
420
725
5
400
08
800
560
900
5
400
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
4GBL
Unit
Conditions
T
J
Operating and storage
-55 to 150
o
C
Tstg
temperature range
R
thJC
Max. thermal resistance
6.5
°C/ W
DC rated current through bridge (1)
junction to case
R
thJA
Thermal resistance,
22
°C/ W
DC rated current through bridge (1)
junction to ambient
W
Approximate weight
2 (0.07)
g (oz)
Thermal and Mechanical Specifications
Parameters
4GBL
Unit
Conditions
Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate
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