參數(shù)資料
型號: 4GBL06
廠商: VISHAY SEMICONDUCTORS
元件分類: 橋式整流
英文描述: 4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: PLASTIC PACKAGE-4
文件頁數(shù): 1/5頁
文件大小: 99K
代理商: 4GBL06
4.0 Amps Single Phase Full Wave
Bridge Rectifier
I
O(AV) = 4A
V
RRM = 50/ 800V
4GBL Series
1
Bulletin I2716 rev. F 06/03
www.irf.com
Description
These GBL Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Parameters
4GBL
Units
Major Ratings and Characteristics
I
O
4A
@ T
C
50
°C
I
FSM
@50Hz
150
A
@ 60Hz
158
A
I2t
@ 50Hz
113
A2s
@ 60Hz
104
A2s
VRRM
range
50 to 800
V
T
J
- 55 to 150
oC
4GBL
Features
Diode chips are glass passivated
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 V
RMS)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
PART OBSOLETE - EOL18
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