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參數(shù)資料
| 型號： | 40MT160PAPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | DIODE 3 PHASE, 45 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE, POWER MODULE-7, Bridge Rectifier Diode |
| 中文描述： | Bridge Rectifiers 1600 Volt 40 Amp |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 40MT160PAPBF |
MTP 3-Phase Rectifier Series
7
Bulletin I27145 rev. B 06/02
www.irf.com
Fig. 11 - Current Rating Characteristics
Fig. 12 - On-state Voltage Drop Characteristics
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Current Rating Nomogram (1 Module Per Heatsink)
Total Output Current (A)
Maximum
Allowable
Case
Temperature
(°C)
Instantaneous
On-state
Current
(A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak
Half
Sine
Wave
On-state
Current
(A)
Instantaneous On-state Voltage (V)
Pulse Train Duration(s)
Peak
Half
Sine
Wave
On-state
Current
(A)
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Maximum
Total
Power
Loss
(W)
0
30
60
90
120
150
0.05
K/W
RthSA
=
0.025
K/W
- Delta
R
0.5
K/W
1 K/W
0.3
K/W
0.2
K/W
0.1
K/W
1
10
100
1000
0.5
1
1.5
2
2.5
3
3.5
4
Tj = 150C
Tj = 25C
100MT...P
100
150
200
250
300
350
400
1
10
100
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
100MT...P
Per Junction
0
50
100
150
200
250
300
350
400
450
500
0.01
0.1
1
10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Initial T j = 125C
No Voltage Reapplied
Rated V rrm Reapplied
Of Conduction May Not Be Maintained.
100MT...P
Per Junction
0
100
200
300
400
500
0
20
406080
100
120
(Rect)
Tj = 150C
100MT...P
40
60
80
100
120
140
40 50 60 70 80 90 100 110 120 130
120
(Rect)
Per Module
100MT...P
R
(DC) = 0.19 K/W
thJC
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