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參數(shù)資料
| 型號(hào)： | 40MT160PAPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | DIODE 3 PHASE, 45 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE, POWER MODULE-7, Bridge Rectifier Diode |
| 中文描述： | Bridge Rectifiers 1600 Volt 40 Amp |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | 40MT160PAPBF |
MTP 3-Phase Rectifier Series
6
Bulletin I27145 rev. B 06/02
www.irf.com
Fig. 6 - Current Rating Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink)
Total Output Current (A)
Maximum
Allowable
Case
Temperature
(°C)
Instantaneous
On-state
Current
(A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak
Half
Sine
Wave
On-state
Current
(A)
Instantaneous On-state Voltage (V)
Pulse Train Duration(s)
Peak
Half
Sine
Wave
On-state
Current
(A)
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Maximum
Total
Power
Loss
(W)
Fig. 7 - On-state Voltage Drop Characteristics
1
10
100
1000
01
2345
Tj = 150C
Tj = 25C
70MT...P
100
150
200
250
300
350
1
10
100
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
70MT...P
Per Junction
50
100
150
200
250
300
350
400
0.01
0.1
1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 150C
No Voltage Reapplied
Rated V rrm Reapplied
70MT...P
Per Junction
0
30
60
90
120
150
RthSA
=
0.1
K/W
- Delta
R
0.3
K/W
0.4
K/W
0.5
K/W
1 K/W
0.2
K/W
0
50
100
150
200
250
300
020
40
60
80
120
(Rect)
Tj = 150C
70MT...P
60
70
80
90
100
110
120
130
140
150
160
0
10
203040
5060
7080
120
(Rect)
70MT...P
R
(DC) = 0.23 K/W
Per Module
thJC
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