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參數(shù)資料
| 型號： | 40MT160PAPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | DIODE 3 PHASE, 45 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE, POWER MODULE-7, Bridge Rectifier Diode |
| 中文描述： | Bridge Rectifiers 1600 Volt 40 Amp |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 40MT160PAPBF |
MTP 3-Phase Rectifier Series
2
Bulletin I27145 rev. B 06/02
www.irf.com
I
O
Maximum DC output current
45
75
100
A
120° Rect conduction angle
@ Case temperature
100
80
°C
I
FSM
Maximum peak, one-cycle
270
380
450
A
t = 10ms
No voltage
forward, non-repetitive
280
398
470
t = 8.3ms
reapplied
on state surge current
225
320
380
t = 10ms
100% V
RRM
240
335
400
t = 8.3ms
reapplied
Initial
I2t
Maximum I2 t for fusing
365
724
1013
A2s
t = 10ms
No voltage
T
J = TJ max.
325
660
920
t = 8.3ms
reapplied
253
512
600
t = 10ms
100% V
RRM
240
467
665
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
3650
7240
10130
A2
√s
t = 0.1 to 10ms, no voltage reapplied
VF(TO) Value of threshold voltage
0.78
0.82
0.75
V
@ T
J max.
rt
Slope resistance
14.8
9.5
8.1
m
V
FM
Maximum forward voltage drop
1.45
1.51
V
T
J = 25°C
Ipk = 40A Ipk = 70A Ipk = 100A
tp = 400s single junction
Forward Conduction
V
INS
RMS insulation voltage
3500
V
T
J = 25
o
C all terminal shorted
f = 50Hz, t = 1s
Insulation Table
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameter
40MT
70MT
100MT
Units Conditions
Voltage
V
RRM, maximum
V
RSM, maximum
I
RRM max.
Type number
Code
repetitive peak
non-repetitive peak
@ T
J = 150°C
reverse voltage
VV
VmA
40-70-100MT140P
140
1400
1500
5
40-70-100MT160P
160
1600
1700
Parameter
40MT
70MT
100MT
Units Conditions
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|---|---|
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