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參數(shù)資料
| 型號： | 2SK3747 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | High-Voltage, High-Speed Switching Applications |
| 中文描述： | 高壓，高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 38K |
| 代理商： | 2SK3747 |
2SK3747
No.7767-2/4
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Note) Although the protection diode is contained between gate and source, be careful of handling enough.
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=2A
VDS=200V, VGS=10V, ID=2A
VDS=200V, VGS=10V, ID=2A
IS=2A, VGS=0
400
85
45
12.5
30
152
45
37.5
2.7
20
0.88
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
1.2
Package Dimensions
unit : mm
2076B
Switching Time Test Circuit
Unclamped Inductive Test Circuit
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PML
16.0
2.0
1.0
2.8
4
2
5
8
2
2
5.6
3.1
2.0
2
0.6
5.45
5.45
1
2
3
3
3.4
PW=10
μ
s
D.C.
≤
0.5%
P.G
RGS=50
G
S
D
ID=1A
RL=200
VDD=200V
VOUT
2SK3747
VIN
10V
0V
VIN
50
≥
50
DUT
VDD
L
10V
0V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3747 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N TO-3PML |
| 2SK3747-1E | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3747-1EX | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES |
| 2SK3747-MG8 | 功能描述:MOSFET HIGH-VOLTAGE POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3748 | 功能描述:MOSFET HIGH-VOLTAGE POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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