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參數(shù)資料
| 型號： | 2SK3747 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | High-Voltage, High-Speed Switching Applications |
| 中文描述： | 高壓，高速開關(guān)應用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SK3747 |
2SK3747
No.7767-1/4
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
mJ
A
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
1500
±
20
2
4
PW
≤
10
μ
s, duty cycle
≤
1%
Allowable Power Dissipation
PD
3.0
50
150
Tc=25
°
C
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
*1 VDD=99V, L=20mH, IAV=2A
*2 L
≤
20mH, single pulse
Tch
Tstg
EAS
IAV
--55 to +150
42
2
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3747
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
ID=1mA, VGS=0
VDS=1200V, VGS=0
VGS=
±
16V, VDS=0
VDS=10V, ID=1mA
VDS=20V, ID=1A
ID=1A, VGS=10V
1500
V
μ
A
μ
A
V
S
100
±
10
3.5
2.5
0.7
1.4
10
13
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7767
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
81004QB TS IM TB-00000018
2SK3747
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching
Applications
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| 2SK374 | Silicon N-Channel Junction FET |
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| 2SK3767 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3747 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N TO-3PML |
| 2SK3747-1E | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3747-1EX | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES |
| 2SK3747-MG8 | 功能描述:MOSFET HIGH-VOLTAGE POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3748 | 功能描述:MOSFET HIGH-VOLTAGE POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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