- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371557 > 2SK3727-01 (FUJI ELECTRIC CO LTD) N-CHANNEL SILICON POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3727-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 2.2 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 110K |
| 代理商： | 2SK3727-01 |
1
Item
Drain-source voltage
Symbol
V
DS
V
DSX *5
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
Ratings
Unit
V
V
A
A
V
A
mJ
kV/μs
kV/μs
W
900
900
±2.2
±8.8
±30
2.2
127.2
40
5
2.02
75
+150
-55 to +150
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3727-01
FUJI POWER MOSFET
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
V
DS
=900V V
GS
=0V
DS
=720V V
GS
=0V
V
GS
I
D
=1.1A V
GS
=10V
I
D
=1.1A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V I
D
=1.1A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
900
3.0
V
V
μA
nA
S
pF
nC
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
1.667
62.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
T
ch
=25°C
V
ch
=125°C
=±30V
DS
=0V
V
CC
=450V
I
D
=2.2A
V
GS
=10V
L=48.2mH T
ch
=25°C
I
F
=2.2A V
GS
=0V T
ch
=25°C
I
F
=2.2A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
°C
°C
5.0
25
250
100
8.00
6.15
2.2
1.1
250
36
375
55
2.2
17
6
26
28
8.3
3.4
2.2
3.3
26
9
39
42
12.5
5.1
3.3
2.2
0.90
0.8
2.2
1.50
Outline Drawings [mm]
Equivalent circuit schematic
*3 I
F
=
D
, -di/dt=50A/μs, Vcc=
DSS
, Tch=
TO-220AB
Gate(G)
Source(S)
Drain(D)
200305
*4 VDS<=
*1 L=48.2mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK372 | N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) |
| 2SK373 | N CHANNEL JUNCTION TYPE (FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT APPLICATIONS) |
| 2SK3747 | High-Voltage, High-Speed Switching Applications |
| 2SK374 | Silicon N-Channel Junction FET |
| 2SK3752-01R | N-CHANNEL SILICON POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3727-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3728-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK372-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 30mA Si 3-Pin Mini |
| 2SK372-GR(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK3737-5-TL-E | 功能描述:MOSFET N-CH 15V 30MA 3MCP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。