參數(shù)資料
型號: 2SK3592-01SJ
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: N-CHANNEL SILICON POWER MOSFET
中文描述: 57 A, 150 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 2/4頁
文件大小: 263K
代理商: 2SK3592-01SJ
2
Characteristics
2SK3592-01L,S,SJ
FUJI POWER MOSFET
ID=f(VGS):80μs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80μs Pulse test,Tch=25°C
gfs=f(ID):80μs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80μs Pulse test, Tch=25°C
0
2
4
6
8
10
12
0
40
80
120
160
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
I
VDS [V]
Typical Output Characteristics
VGS=5.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
I
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
g
ID [A]
Typical Transconductance
0
40
80
ID [A]
120
160
0.00
0.03
0.06
0.09
0.12
0.15
7.0V
6.5V
R
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0
25
50
75
100
125
150
0
50
100
150
200
250
300
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
25
50
75
100
125
150
0
200
400
600
800
1000
I
AS
=23A
I
AS
=57A
I
AS
=35A
A
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=48V
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