參數(shù)資料
型號: 2SK3215
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 2/5頁
文件大小: 31K
代理商: 2SK3215
2SK3215
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note2
200
V
Gate to source voltage
±
20
V
Drain current
8
A
Drain peak current
Note1
32
A
Body-drain diode reverse drain current
8
A
Avalanche current
Note3
8
A
Avalanche energy
Note3
4.2
mJ
Channel dissipation
40
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
200
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16V, V
DS
= 0
V
DS
= 200 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
=4A, V
GS
= 10V
Note4
I
D
=4A, V
GS
= 4V
Note4
I
D
=4A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
±
20
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
±
10
μ
A
μ
A
Zero gate voltege drain current
10
Gate to source cutoff voltage
1.0
2.5
V
Static drain to source on state
0.35
0.40
resistance
0.40
0.55
Forward transfer admittance
4
6.5
S
Input capacitance
410
pF
Output capacitance
Coss
150
pF
Reverse transfer capacitance
Crss
90
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
10
ns
I
D
=4A, V
GS
= 10V
R
L
= 7.5
Rise time
45
ns
Turn-off delay time
100
ns
Fall time
60
ns
Body–drain diode forward voltage
0.95
V
I
F
= 8A, V
GS
= 0
I
= 8A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
100
ns
相關(guān)PDF資料
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