參數(shù)資料
型號(hào): 2SK3225
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 39K
代理商: 2SK3225
1998,1999
MOS FIELD EFFECT TRANSISTOR
2SK3225
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D13798EJ1V0DS00 (1st edition)
May 1999 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-State Resistance
R
DS(on)1
= 18 m
MAX. (V
GS
= 10 V, I
D
= 17 A)
R
DS(on)2
= 27 m
MAX. (V
GS
= 4.0 V, I
D
= 17 A)
Low C
iss
: C
iss
= 2100 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS(AC)
±20
V
Gate to Source Voltage
V
GSS(DC)
+20,
10
V
Drain Current (DC)
Drain Current (Pulse)
Note
I
D(DC)
±34
A
I
D(pulse)
±136
A
Total Power Dissipation (T
C
= 25°C)
P
T
40
W
Total Power Dissipation (T
A
= 25°C)
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Note
PW
10
μ
s, Duty cycle
1 %
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
3.13
°C/W
Channel to Ambient
R
th(ch-A)
125
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3225
TO-251
2SK3225-Z
TO-252
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