參數(shù)資料
型號: 2SK3221
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開關N溝道功率MOSFET
文件頁數(shù): 1/8頁
文件大小: 72K
代理商: 2SK3221
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1998
MOS FIELD EFFECT TRANSISTOR
2SK3221
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
D13789EJ1V0DS00 (1st edition)
June 2002 NS CP(K)
DESCRIPTION
The 2SK3221 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 9 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 2.0 A)
Gate voltage rating
±
30
V
Low on-state resistance
R
DS(on)
= 4.4
MAX. (V
GS
= 10 V, I
D
= 1.0 A)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
30
±
2.0
±
8.0
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation (T
A
= 25°C)
P
T1
2.0
W
Total Power Dissipation (T
C
= 25°C)
P
T2
25
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Diode Recovery dv/dt
Note3
T
stg
–55 to +150
°C
I
AS
2.0
A
E
AS
2.7
mJ
dv/dt
3.5
V/ns
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 150
V, R
G
= 25
, V
GS
= 20
0 V
3.
I
F
1.0 A, V
clamp
= 600
V, di/dt
100 A/
μ
s, T
A
= 25°C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3211
Isolated TO-220
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