參數(shù)資料
型號(hào)： 2SK2688-01
廠商： FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述： N-channel MOS-FET
中文描述： N溝道場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 144K
代理商： 2SK2688-01
2SK2688-01
FAP-IIS Series
N-channel MOS-FET
0,017
±50A
30V
60W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Repetitive Avalanche Rated
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ
W
°C
°C
30
±50
±200
±16
520
60
150
-55 ~ +150
L=0.277mH,Vcc=12V
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
BV
DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=30V
V
GS
=0V
V
GS
=±16V
I
D
=25A
I
D
=25A
I
D
=25A
Min.
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=4V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=15V
I
D
=50A
V
GS
=10V
R
GS
=10
T
ch
=25°C
30
1,0
1,5
10
0,2
10
2,0
500
1,0
100
0,017
0,01
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
0,012
0,0075
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
22
45
2750
1300
600
4130
1950
900
13
20
180
55
150
270
83
230
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
50
1,14
85
0,17
1,71
130
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
R
th(ch-c)
R
th(ch-a)
Test conditions
channel to case
channel to air
Min.
Typ.
Max.
2,08
125,0
Unit
°C/W
°C/W
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2689-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK2690-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5 Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/
2SK2690-01SC-P 制造商:Fuji Electric 功能描述:
2SK2691-01RSC 制造商:Fuji Electric 功能描述:
2SK2698 功能描述:MOSFET N-Ch 500V 15A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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