參數(shù)資料
型號： 2SK2690-01
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-channel MOS-FET
中文描述： 80 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-228AA
封裝： SC-65, TO-3P, 3 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 406K
代理商： 2SK2690-01
2SK2690-01
FAP-IIIB Series
N-channel MOS-FET
0,01
60V
80A
125W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ*
W
°C
°C
60
80
320
±20
599
125
150
-55 ~ +150
* L=0,125mH, V
CC
=24V
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA V
DS=
V
GS
V
DS
=60V
V
GS
=0V
V
GS
=±20V
I
D
=40A
Min.
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
60
1,0
1,5
10
0,2
10
2,0
500
1,0
100
0,017
0,01
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=4V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
I
D
=75A
V
GS
=10V
R
GS
=10
T
ch
=25°C
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
0,012
0,0075
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
I
D
=40A
25
55
3500
1250
360
15
75
190
110
5250
1870
540
23
120
285
165
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=160A V
GS
=0V T
ch
=25°C
I
F
=80A V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
80
1,15
75
0,17
1,65
120
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
35
Unit
°C/W
1,0 °C/W
Collmer Semconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com- 11/98
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2690-01SC-P 制造商:Fuji Electric 功能描述:
2SK2691-01RSC 制造商:Fuji Electric 功能描述:
2SK2698 功能描述:MOSFET N-Ch 500V 15A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2698(F) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P
2SK2698(F,T) 功能描述:MOSFET N-Ch 500V 15A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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