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參數(shù)資料
| 型號： | 2SJ247 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 47K |
| 代理商： | 2SJ247 |
2SJ247
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
–100
V
Gate to source voltage
±
20
V
Drain current
–8
A
Drain peak current
–32
A
Body to drain diode reverse drain current
–8
A
Channel dissipation
40
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–100
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –80 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –4 A, V
GS
= –10 V*
1
I
D
= –4 A, V
GS
= –4 V*
1
I
D
= –4 A, V
DS
= –10 V*
1
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–250
V
GS(off)
R
DS(on)
–1.0
—
–2.0
V
Static drain to source on state
—
0.25
0.3
resistance
—
0.3
0.45
Forward transfer admittance
|y
fs
|
Ciss
3.0
5.5
—
S
Input capacitance
—
880
—
pF
Output capacitance
Coss
—
325
—
pF
Reverse transfer capacitance
Crss
—
80
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
12
—
ns
I
D
= –4 A, V
GS
= –10 V,
R
L
= 7.5
Rise time
—
47
—
ns
Turn-off delay time
—
150
—
ns
Fall time
—
75
—
ns
Body to drain diode forward
voltage
—
–1.0
—
V
I
F
= –8 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
—
170
—
ns
I
F
= –8 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
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PDF描述 |
|---|---|
| 2SJ248 | Silicon P-Channel MOS FET |
| 2SJ254 | Very High-Speed Switching Applications |
| 2SJ255 | Very High-Speed Switching Applications |
| 2SJ256 | Very High-Speed Switching Applications |
| 2SJ257 | Very High-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ247-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ248 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ248-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,100V,8A,0.25ohm,TO-220FM 制造商:Renesas 功能描述:Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220FM Box |
| 2SJ251 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-220AB |
| 2SJ252 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-220AB |
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