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參數(shù)資料
| 型號： | 2SD0946B |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Low-Frequency Amplification |
| 中文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2SD0946B |
2SC5001
Transistors
Low V
CE(sat)
Transistor (Strobe flash)
(20V, 10A)
2SC5001
z
Features
1) Low saturation voltage, typically V
CE(sat)
= 0.13V at I
C
/
I
B
= 4A / 50mA.
2) High current capacity, typically I
C
= 10A for DC
operation and 15A for 10ms pulse.
3) Complements the 2SA1834.
z
Packaging specifications and h
FE
Type
2SC5001
CPT3
QR
TL
2500
Basic ordering unit (pieces)
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
2
Base current
Rev.A
1/2
Package
h
FE
Code
z
External dimentions
(Unit : mm)
CPT3
(1)Base
(2)Collector
(3)Emitter
6.5
5.1
2.3
(2)
(3)
0.65
0
(1)
0.75
2.3
0.9
1
5
2.3
0.5
1.0
0.5
9
2
0
1
P
C
T
j
Tstg
Limits
30
20
6
10
15
1
10
150
55 to
+
150
Unit
V
V
V
A
A
A
W
W(Tc
=
25
°
C
)
°
C
°
C
Single pulse Pw
=
10ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
z
Electrical characteristics
(Ta=25
°
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
DC current transfer ratio
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
Min.
30
20
6
120
82
Typ.
0.13
0.9
Max.
1
1
0.25
1.2
390
Unit
V
V
V
μ
A
μ
A
V
V
Conditions
f
T
Cob
150
220
MHz
pF
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
20V
V
EB
=
5V
I
C
/I
B
=
4A/0.05A
I
C
/I
B
=
4A/0.05A
V
CE
/I
C
=
2V/0.5A
V
CE
=
2V , I
C
=
4A
V
CE
=
5V , I
E
=
1.5A , f
=
50MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
Transition frequency
Output capacitance
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| 2SC5004 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5004-T1 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5006 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5006-T1 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD0946B(2SD946B) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:パワーデバイス － パワートランジスタ － その他 |
| 2SD0946BQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD0946BR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD0946BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | TO-126 |
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