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參數(shù)資料
| 型號(hào)： | 2SC5006-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 中文描述： | NPN硅外延晶體管3引腳超超級(jí)迷你模具 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 2SC5006-T1 |
1993
DATA SHEET
SILICON TRANSISTOR
2SC5006
Document No. P10385EJ2V0DS00 (2nd edition)
(Previous No. TD-2399)
Date Published July 1995 P
Printed in Japan
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which
is an NEC proprietary fabrication technique.
FEATURES
Low Voltage Use.
High f
T
Low C
re
Low NF
High |S
21e
|
2
: 9 dB TYP. (@ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz)
Ultra Super Mini Mold Package.
: 4.5 GHz TYP. (@ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz)
: 0.7 pF TYP. (@ V
CE
= 3 V, I
E
= 0, f = 1 MHz)
: 1.2 dB TYP. (@ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz)
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5006
50 pcs./Unit
2SC5006-T1
3 kpcs./Reel
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3.0
100
125
150
V
V
V
mA
mW
C
C
–60 to +150
1.6 ± 0.1
0.8 ± 0.1
1
1
1
+
–
+
–
2
3
0
0
0
+
–
PACKAGE DIMENSIONS
in millimeters
1. Emitter
2. Base
3. Collector
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5007 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5007-T1 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5008-T1 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5009-T1 | NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5010-T1 | 128 x 128 pixel format, LED or EL Backlight available |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5006-T1-A | 制造商:Renesas Electronics Corporation 功能描述:NPN SMALL SIGNAL AMPLIFIER 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 12V 0.1A 3-Pin Ultra Super Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.1A,US-MiniMold3 制造商:Renesas 功能描述:Trans GP BJT NPN 12V 0.1A 3-Pin Ultra Super Mini-Mold T/R |
| 2SC5006-T1-A(FB) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC5007 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5007(NE68119) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5007-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:7GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.4dB @ 1GHz 增益:12dB 功率 - 最大值:125mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:80 @ 7mA，3V 電流 - 集電極（Ic）（最大值）:65mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
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