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參數(shù)資料
| 型號(hào)： | 2SC5010-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | 128 x 128 pixel format, LED or EL Backlight available |
| 中文描述： | NPN硅外延晶體管3引腳超超級(jí)迷你模具 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | 2SC5010-T1 |
1993
DATA SHEET
SILICON TRANSISTOR
2SC5010
Document No. P10389EJ2V0DS00 (2nd edition)
(Previous No. TD-2401)
Date Published July 1995 P
Printed in Japan
DESCRIPTION
The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an
NEC proprietary fabrication technique.
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
FEATURES
Low Voltage Use.
High f
T
Low C
re
Low NF
High |S
21e
|
2
: 8.5 dB TYP. (@ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz)
Ultra Super Mini Mold Package.
: 12.0 GHz TYP. (@ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz)
: 0.4 pF TYP. (@ V
CE
= 3 V, I
E
= 0, f = 1 MHz)
: 1.5 dB TYP. (@ V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz)
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5010
50 pcs/Unit.
2SC5010-T1
3 kpcs/Reel.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
9
6
2
V
V
V
30
125
150
mA
mW
C
C
–65 to +150
Embossed tape 8 mm wide.
Pin3(Collector) face to perforation side
of the tape.
PACKAGE DIMENSIONS
in milimeters
1.6 ± 0.1
0.8 ± 0.1
1
1
1
+
–
+
–
2
3
0
0
0
+
–
1. Emitter
2. Base
3. Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5011 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5011-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5011-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5012-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5012-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5010-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,6V,30mA,US-MiniMold3 制造商:Renesas 功能描述:GP BJT |
| 2SC5010-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5011 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5011(NE85618) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5011-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:6.5GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.1dB @ 1GHz 增益:13dB 功率 - 最大值:150mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:50 @ 20mA，10V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:SC-82A，SOT-343 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
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