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參數(shù)資料
| 型號： | 2SC5011-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 中文描述： | 高頻低噪聲放大器NPN硅外延晶體管4個引腳超小型模具 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2SC5011-T2 |
1993
DATA SHEET
SILICON TRANSISTOR
2SC5011
Document No. P10399EJ2V0DS00 (2nd edition)
(Previous No. TD-2411)
Date Published July 1995 P
Printed in Japan
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
Small Package
High Gain Bandwidth Product
(f
T
= 6.5 GHz TYP.)
Low Noise, High Gain
Low Voltage Operation
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5011-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to
perforation side of the tape.
2SC5011-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
*
Please contact with responsible NEC person, if you require
evaluation sample. It is available for 50 pcs. one unit sample lot.
(Part No.: 2SC5011)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3
100
150
150
V
V
V
mA
mW
C
C
–65 to +150
PACKAGE DIMENSIONS
in millimeters
Caution; Electrostatic Sensitive Device.
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
(
0
0
(
2
1
4
+0.1
0.4
0
+0.1
0
+
–
X
0 to 0.1
0
0.15
+0.1
0
+
–
2
3
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5012-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5012-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5012 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5012(NE68118) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5012-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:9GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.2dB @ 1GHz 增益:15dB 功率 - 最大值:150mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 20mA，8V 電流 - 集電極（Ic）（最大值）:65mA 安裝類型:表面貼裝 封裝/外殼:SC-82A，SOT-343 供應商器件封裝:- 標準包裝:1 |
| 2SC5012-FB(T1) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5012-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
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