參數(shù)資料
型號: 2SC518383R
廠商: NEC Corp.
英文描述: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述: 表面貼裝NPN硅高頻晶體管
文件頁數(shù): 8/21頁
文件大小: 196K
代理商: 2SC518383R
NE68719
V
CE
= 2.0 V, I
C
= 5.0 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
MAG
ANG
-18.000
-66.300
-106.100
-120.700
-151.800
-178.500
159.500
139.500
96.600
53.600
MAG
13.956
10.170
6.431
5.350
3.763
2.912
2.403
2.086
1.712
1.460
ANG
MAG
0.020
0.062
0.090
0.102
0.132
0.163
0.197
0.233
0.309
0.378
ANG
76.300
56.800
46.900
44.900
40.100
35.300
29.100
22.100
5.600
-14.000
MAG
0.954
0.721
0.508
0.452
0.377
0.340
0.316
0.291
0.207
0.192
ANG
-13.300
-41.500
-57.100
-61.000
-66.900
-71.600
-76.100
-83.000
-110.900
-174.900
(dB)
28.437
22.149
18.540
17.198
14.550
10.809
8.858
7.483
5.641
4.538
V
CE
= 2.0 V, I
C
= 20.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
NE687 SERIES
0.469
0.247
0.166
0.148
0.129
0.122
0.115
0.116
0.187
0.307
-38.900
-106.600
-153.400
-169.000
161.600
139.700
124.900
114.300
85.100
47.800
29.942
14.412
7.775
6.300
4.295
3.279
2.678
2.304
1.857
1.572
148.800
104.600
82.800
75.200
59.400
45.600
32.900
20.600
-3.600
-28.300
0.016
0.045
0.077
0.094
0.135
0.176
0.217
0.258
0.337
0.403
71.900
64.000
61.100
58.900
51.600
43.500
34.400
25.300
5.700
-15.200
0.835
0.448
0.303
0.276
0.246
0.232
0.223
0.205
0.120
0.137
-24.600
-53.100
-59.500
-60.900
-63.500
-66.900
-70.400
-77.100
-110.500
160.100
0.390
0.809
0.987
1.018
1.056
1.069
1.072
1.069
1.053
1.032
32.722
25.055
20.042
17.433
13.584
11.099
9.271
7.908
6.005
4.822
0.795
0.577
0.364
0.303
0.224
0.187
0.171
0.165
0.212
0.319
162.300
123.500
94.800
85.100
65.800
49.900
35.700
22.700
-2.900
-29.000
0.200
0.440
0.740
0.844
1.000
1.079
1.108
1.112
1.087
1.047
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
相關(guān)PDF資料
PDF描述
2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183-T1 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183-T2 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5183R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SC5183R-T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143
2SC5183R-T2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143
2SC5183T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143R
2SC5183-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION