參數(shù)資料
型號: 2SC518383R
廠商: NEC Corp.
英文描述: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述: 表面貼裝NPN硅高頻晶體管
文件頁數(shù): 17/21頁
文件大?。?/td> 196K
代理商: 2SC518383R
NE687 SERIES
Parameters
Q1
Parameters
Q1
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RE
RB
RBM
IRB
RC
CJE
VJE
MJE
CJC
VJC
8.0e-17
128
1.0
17
0.18
3.3e-15
1.48
9.05
1.05
4.3
0.009
4.0e-15
1.5
0.8
11.1
2.46
0.017
7.5
0.415e-12
0.68
0.53
0.102e-12
0.29
MJC
XCJC
CJS
VJS
MJS
FC
TF
XTF
VTF
ITF
PTF
TR
EG
XTB
XTI
KF
AF
0.53
0.27
0
0.75
0
0.37
6.0e-12
11.9
9.55
1.78
69.1
1.0e-9
1.11
0
3
0
1
NE68719 NONLINEAR MODEL
(1) Gummel-Poon Model
SCHEMATIC
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
Parameters
C
CB
C
CE
L
B
L
E
C
CBPKG
C
CEPKG
L
BX
L
CX
L
EX
68719
0.26e-12
0.19e-12
0.81e-9
0.85e-9
0.17e-12
0.21e-12
0.19e-9
0.19e-9
0.19e-9
ADDITIONAL PARAMETERS
UNITS
MODEL TEST CONDITIONS
Frequency:
0.05 to 3.0 GHz
Bias:
V
CE
= 1 V to 2 V, I
C
= 1 mA to 10 mA
BJT NONLINEAR MODEL PARAMETERS
(1)
Base
Emitter
Collector
L
BX
L
B
L
EX
L
E
L
CX
C
CBPKG
C
CB
C
CE
C
CEPKG
Q1
相關(guān)PDF資料
PDF描述
2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183-T1 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5183-T2 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
2SC5184-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5183R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SC5183R-T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143
2SC5183R-T2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143
2SC5183T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143R
2SC5183-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION